igfet

igfet

1. Based on the basic structure of IGFET, the authors use new standpoints and methods to analyze the working principle, the breakdown position and the breakdown reason of the transistor.

从场效应管的基本结构出发,用新观点、新方法说明其基本工作原理,击穿的位置,击穿的原因。

2. Concerning working principle of insulated gate field-effect transistor (IGFET) , in the existing and using textbooks, there are several different explanations that are unlike in their opinions each other.

关于绝缘栅场效应管的工作原理,现行教材有几种不同的讲解,观点各不相同。

3. This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model to be extracted, which is for short channel MOS Field Effect transistor specially.

本论文选取目前业界占主流地位的BSIM3(Berkeley short-channel IGFET model)为将要提取的模型，它是专门为短沟道MOS场效应晶体管而开发的一种模型。

4. isolated-gate field effect transistor (IGFET)

绝缘栅场效应晶体管

5. Other applications of the coating process and the improved barrier-layer are field-effect-transistors FET, insulated-gate-field-effect-transistors IGFET, and charge-coupled-devices CCD.

该涂覆工艺与改良的势垒层的其他应用奥扩场效应晶体管（FET）、绝缘栅场效应晶体管（IGFET）与电荷耦合器件(CCD)。