inp

inp

1. Inp aeq

(=inpartes aequales) (拉)于同一部分

2. Using ultrafast pump-probe reflectivity spectroscopy, the reflectivity dynamics of photoexcited carriers in Fe implanted InP was studied.

3. 应用超快泵浦-探测反射谱研究了掺Fe的InP中的光生载流子的反射动力学。

3. Adsorption of Al on the InP(110) Surface

Al在InP(110)面上的吸附

4. STUDY OF THE DIFFUSION OF Cd AND Zn IN InP

Cd和Zn在InP中扩散的研究

5. Plasma-Enhanced CVD SiO_2 Films on InP and Study of C-V Charateristics in InP-MIS Structures

InP上等离子增强化学汽相淀积SiO_2膜及其MIS结构C-V特性研究

6. Morphology of low temperature buffer layers and its influence on InP epilayer growth

InP低温缓冲层的表面形貌及对其外延层生长的影响

7. Temperature Rise of InP Heated by CW CO_2 Laser Locally

InP基片在连续波CO_2激光局域加热时的温度上升特性

8. MOCVD GROWTH AND CHARACTERIZATION OF InP DOPING SUPERLATTICES

InP掺杂超晶格的MOCVD生长与表征

9. RESEARCHES ON InP OHMIC CONTACT

InP欧姆接触研究

10. AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate

InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析

11. MBE Growth of High 2-DEG Sheet Density InP Based PHEMT Epitaxial Materials

MBE生长高2-DEG面密度InP基PHEMT外延材料

12. CW Ar~+ laser recrystallization of inP films on SiO_2

SiO_2上InP薄膜的连续Ar~+激光再结晶

13. A New Technique for the Growth of Multilayer InP Material

一种生长多层InP材料的新技术

14. Various Melt Stoichiometry Conditions Related Defects in InP Materials

不同熔体配比InP材料中的缺陷研究

15. Ps two-wave coupling in InP and its application

中皮秒二波耦合及其应用

16. The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.

以CBr_4作为碳杂质源，采用GSMBE技术生长了与InP匹配的重碳掺杂p型InGaAs材料。

17. The good selectivity and specificity of this RPLC-based procedure render it suitable for measurements of INP stability.

以上结果显示，已发展出的高压液相色谱分析法具有良好的选择性和专一性，适合用来测量吲哚洛芬的安定性。

18. The microstructures of INP latex films were characterized by IR and transmission electron microscopy (TEM).

以红外光谱、透射电子显微镜表征互穿共聚物乳胶膜的微观结构。

19. The conventional LNAs for microwave and millimeter-wave applications were usually implemented with high-cost and high-performance technology, GaAs or InP HEMT/HBT with large chip sizes.

传统应用于微波及毫米波低杂讯放大器通常利用高效能及高成本之砷化镓或磷化铟之高电子移动率电晶体/异质接面双极电晶体制程来实现，然而却使用较大之晶片面积。

20. low loss InP based microwave waveguide

低损耗InP基微波波导

21. low temperature InP buffer

低温InP缓冲层

22. Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient. The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.

光激电流谱的测量结果表明 :在 IP气氛下退火获得的半绝缘磷化铟中的缺陷明显比 PP- SI磷化铟的要少 .

23. Key Responsibilities:1.Provide 3D/2D design, drawing and release according to customer input and engineering inp...... ...

公司名称：艾联（上海）汽车零部件有限公司工作地点：上海市发布时间：2009-5-1

24. Etching of Semiconductor InP by APD of Direct Eximer Laser

准分子激光直接刻蚀InP半导体材料

25. It is also found that some of kossel lines are broken, which is caused by the defects of InP crystal.

分本文还析了某些Kossel线的断裂,指出这些断裂是由于I_nP晶体中的缺陷所造成的。

26. The electrical properties of annealed undoped n type InP are studied by temperature dependent Hall effect (TDH) and current voltage ( I V ) measurements for semiconducting and semi insulating samples,respectively.

利用变温霍尔和电流 -电压特性 (I- V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量 .

27. Assessments of home- made TMAl,TMCa,TMIn and TMSb have been made by use of an AP-MOVPE equipment made by us. GaAs,AlGaAs,InP,GaSb bulk epilayers and GaAs/AlAs superlattice and GaAs/ AlGaAs quantum wells have been grown.

利用我们研制的常压MOVPE设备对国产TMGa、TMAl、TMIn和TMSb进行了鉴定，为此分别生长了GaAs、AlGaAs、InP、GaSb外延层和GaAs/AlAs、GaSb/InGaSb超晶格和GaAs/AlGaAs量子阱结构。

28. Evidences from animal model and some data from humans suggest that the vestibular system have influences on the sympathetic nervous system and cardiovascular control.The inp...

动物模型的证据和人体实验的部分数据表明,前庭系统通过自主神经系统影响心血管调节,其中耳石感受器的传入起着重要作用。

29. Calculation on Molecular Orbit at Sub-internal Shell in InP

半导体InP中次内层分子轨道能级的计算

30. Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP

半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制

31. single crystalline InP nanopore array

单晶磷化铟纳米孔阵列

32. The Perfect Study of Bi-Doped InP Crystals

双掺杂InP晶体的完整性研究

33. $octopus_exe < inp &> out");

听 听 听 听system("cd $workdir;

34. An RPLC-based assay that could determine the extent of degradation of INP in a rapid, sensitive, and accurate manner was developed.

因此发展一快速、敏感度高、及准确的高压液相色谱分析法，并藉此来定量吲哚洛芬并观察其光解反应。

35. INP; International Research Institute for Climate Prediction;

国际气候预测研究所;

36. Moreover a P collective region is also produced at the interface of contact and p-InP where Au and InP compound Au2P3. The binding energy of P 2p3/2 of Au2P3 is about 129.2 eV.

在接触与p-InP的界面产生一个P聚集区,同时Au与InP反应生成Au2p3,其P的2p3/2电子的结合能约为129.2 eV。

37. Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper.

对不同气氛下高温退火非掺杂磷化铟(InP)材料的电子辐照缺陷进行了研究.

38. Takeshima, Masumi. "Auger Recombination in InAs, GaSb, InP, and GaAs." J. Appl. Phys. 43 (1972): 4114-4119.

对于一些重要的二元化合物之欧杰再结合的有用资讯(材料参数与理论)。

39. The polished InP substrate is put in the dense etchant of HCl,a etched groove pattern can be observed on the polished surface,It can be found that the orientation of the etched grooves is coincided with[110]on(001) InP.

将去掉机械划痕的 InP 衬底放入浓 HCl,发现腐蚀出的条形沟方向是和片子的[110]方向一致。

40. Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J].

引用该论文 Wang Qi,Ren Xiaomin,Huang Yongqing,Huang Hui,Cai Shiwei.

41. Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J].

引用该论文 常伟,范广涵,谭春华,李述体,雷勇,黄琨,郑品棋,陈宇彬.

42. Ps two-wave coupling in InP and its application[J].

引用该论文 毛宏伟,李富铭,罗龙根,邓锡铭.

43. Kashkarov.Doping of Zn into InP Induced by YAG Continuous Wave Laser[J].

引用该论文 蔡志华,田洪涛,陈朝,周海光,孙书农,Pavel K.

44. EXTREME RADIATION HARDNESS AND LIGHT WEIGHTED InP SOLAR CELL AND ITS COMPUTER SIMUATION

强抗辐射轻型InP光伏太阳电池及其计算机模拟

45. 1 I"ve come to t make sure thats your stay inp Beijing is a pleasant one.

我特地为你们安排使你们在北京的逗留愉快。

46. Analysis on Electrical Properties of Semi-Insulating Fe-and Ga-Codoped InP and Fe-Doped InP

掺Fe或同时掺Fe和Ga半绝缘InP的电学性质分析

47. InP is being used as a platform for a wide variety of fiber communication components, including lasers, LEDs, Semiconductor optical amplifiers, modulators and photo-detectors.

掺硫的N型InP材料主要应用于激光器、发光二极管、光放大器、光纤通信等光电领域。

48. INVESTIGATION OF DAP TRANSITION NATURE OF 1.18eV EMISSION BAND IN InP:Mn

掺锰磷化铟中1.18eV辐射的施主受主对辐射性质的研究

49. In laser induced selective Zn diffusion in InP, a computer controlled system was used to measure and control the temperature of the small exposed region.

提出采用多次激光诱导扩散的积分效应来实现杂质浓度分布的均匀化整形。

50. Abstract : A method for quantitative measurement of the photochemical decomposition of the anti-inflammatory agent, indoprofen (INP) is descriped.

摘要 ： 这篇报告主要是在说明抗发炎药物-吲哚洛芬在光化学分解反应中如何做定量测试的方法。

51. C. E, A. L. Fahrenbruch and R. H. Bube, “Properties of ZnO films deposited onto InP by spray pyrolysis”, Thin Solid Films, 136 (1986 ), 1-10

曲喜新、杨邦朝、姜节俭、张怀武编著，“电子薄膜材料”，北京科学出版社出版，(1996)，P.93

52. A groove large-optical cavity (G-LOC) InGaAsP/InP laser has been fabricated on semi-insulating InP substrate.

本文报道在半绝缘铟磷(InP)衬底上制作的槽状大光腔铟镓砷磷/铟磷(InGaAsP/InP)激光器.

53. V.Gottschalch , W.Heinig , E.Butter, H.Rosin and G.Freydank, “H3PO4 - etching of {001} faces of InP, (GaIn)P, GaP, and Ga(AsP),” Crystal research and technology, vol. 14, p.p 563-569, 2006.

杨智超,高密度氯气电浆应用于氮化镓材料蚀刻制程之模型研究,中原大学化学工程学系硕士论文，2002。

54. Growth rate model of InP epitaxial lateral overgrowth

横向外延过生长磷化铟材料的生长速率模型

55. (AlGa) InP and GaInP/AlInP Multiple Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

气态源分子束外延（AlGa）InP和GaInP/AlInP多量子阱材料

56. XPS and AFM Studies of the InP Surfaces Passivated with Gas-phase and Solution-phase Polysulphide

气相和溶液多硫化物钝化InP表面的XPS和AFM研究

57. A Study of Oxygen Adsorption of InP (111) by Using CLS,AES and XPS

氧在InP(111)面上吸附的CLS、AES和XPS研究

58. Damage Mechanism of N and Bi Implantation into InP

氮和铋离子注入InP损伤机理的分析

59. ANGULAR DISTRIBUTION STUDIES ON THE REACTIVE SCATTERING OF Cl_2 MOLECULAR BEAM WITH InP(100) SURFACE

氯分子束与InP(100)表面反应散射的角分布研究

60. THE ADSORPTION 6F WATER ON SODIUM PREDEPOSITED InP(???) SURFACE

水汽在淀积金属钠的InP(???)表面的吸附

61. Influence of deep level defects on electrical compensation in semi-insulating InP materials

深能级缺陷对半绝缘InP材料电学补偿的影响

62. RF SPUTTERING OF InP FILMS

溅射沉积InP薄膜的研究

63. Study of 1.36 eV Photoluminescence Peak in Sn-Doped InP

热处理掺锡的磷化铟中1.36eV发光峰的研究

64. Based on the experimental results and Arrhenius formular the energy of activation of HC1 reacting with (100) InP, Ea=14kcal/mole, is calculated.

由实验结果和Arrhenius公式求得HCl对InP(100)的化学反应激活能E_a=14kcal/mole.

65. Effects of mask characteristics on InP etched- facets by using inductively coupled plasma dry etching

电感耦合等离子体刻蚀InP端面的掩膜特性研究

66. Keywords InAs self-assembled quantum dots;LP-MOCVD;InP substrate;

砷化铟自组装量子点;低压金属有机化学气相沉积;磷化铟衬底;

67. Thermally induced Fe atom transition from substitution to interstitial in InP: influence on material property

磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响

68. NNUMERICAL ANALYSIS OF THERMAL AND FLOW FIELD IN THE GROWTH OF SINGLE-CRYSTAL INP

磷化铟单晶生长中的传热和流动分析

69. Research of breakdown characteristic of InP composite channel HEMT

磷化铟复合沟道高电子迁移率晶体管击穿特性研究

70. InP HBT

磷化铟异质结双极晶体管

71. InP substrate

磷化铟衬底

72. InP HEMT

磷化铟高电子迁移率晶体管

73. For the first time, a standard CMOS technology can offer gain, bandwidth, and power performances comparable to advanced compound semiconductor technologies (SiGe, GaAs, InP).

第一次利用CMOS技术所设计的宽频放大器可达到增益、频宽、输出功率可以与高阶的化合物半导体技术（矽化锗、砷化镓、磷化铟）。

74. intracellular negative DC potential, INP

细胞内负直流电位

75. The surface damage states of InP after soft X-ray irradiatio

经软X射线辐照的InP的表面损伤态

76. Keywords InP;Band bending;Dynamic process;XPS;

能带弯曲;动态过程;XPS;

77. In the process of doping Zn into InP induced by the pulsed laser,the temperature of the semiconductor and metal interface is one of the most important factors which affect the depth and impurity concentration of laser inducing doping.

脉冲激光诱导InP的Zn掺杂过程中,金属-半导体分界面附近的温度是影响掺杂浓度和掺杂深度的一个重要因素.

78. A stable optical spatial soliton is found when the inp...

该结果与数值解基本一致。

79. CHANGES OF SURFACE ELECTRON STATES OF InP UNDER SOFT X-RAYS IRRADIATION

软X射线辐照引起的InP表面电子态变化

80. Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999.

辛裕明，“射频及高速元件”，台北市通讯元件教学推动中心，民国96年。