silicide

silicide

1. Cr-Ni-Si metal silicide

Cr-Ni-Si金属硅化物

2. Keywords SEM-EDXA;cuticle of bamboo stem;morphology;mineral elements;silicide;

EDXA法;竹茎皮层;形态;矿质元素;硅化物;

3. Research on the Microstructure and Mechanical Property of Metallic Silicide in Mo-Si System

Mo-Si系金属硅化物组织与机械性能的研究

4. Ti-based silicide

Ti基硅化物

5. silicide dye

[化] 含硅染料

6. chromic silicide

[化] 硅化铬

7. copper silicide

一硅化二铜

8. ternary metal silicide

三元金属硅化物

9. Keywords ternary metal silicide;wear resistant composite;high-temperature wear;

三元金属硅化物;耐磨复合材料;高温磨损;

10. In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated.

中文摘要在此篇论文里，使用快速热退火去形成镍化矽的制程被研究。

11. we found Silicide process for reducing the parasitical resistors in CMOS source and drain (Rs and Rd);

为了降低CMOS器件漏极(drain)与源极(source)的寄生电阻(sheet resistance) Rs 与 Rd，而发展出Silicide工艺;

12. molybedenum silicide heating element

二硅化钼加热元件

13. molybdenum silicide furnace

二硅化钼电炉

14. tantalum silicide

二硅化钽

15. Molybdenum silicide heating elements in the shape of U is adopted。

以U字型硅钼棒为发热元件。

16. NMC's current products including 90nm ICP etch systems of 8 and 12 inch for poly gate, tungsten silicide gate as well as STI with in-situ hardmask open process.

公司的主要产品8英寸、12英寸90nm电感耦合(ICP)等离子体刻蚀系统，可广泛应用于多晶硅栅极刻蚀、金属硅化物栅极刻蚀、浅槽隔离刻蚀等工艺。

17. Uranium silicide activities at Babcock and Wilcox Babcock and Wilcox

公司硅化铀活动

18. Study of Ta_5Si_3 during Forming Tantalum Silicide by Cosputtering

共溅法形成钽金属硅化物出现Ta_5Si_3的研究

19. The fabrication and performance of Canadian silicide dispersion fuel for test reactors

加拿大试验堆硅化物弥散燃料的制造与性能

20. Thermodynamic Study on CVD Tungsten Silicide System

化学气相淀积硅化钨体系热力学研究

21. and we found the Salicide process compatible the Silicide and Polycide process in the advanced process.

在更进步的工艺中把Silicide 与 Polycide 一起制造，而发展出所谓Salicide 工艺。

22. Investigation of Pure Polycrystalline Nickel Silicide Film on Thin Oxide

在薄二氧化硅层上纯多晶硅化镍膜的研究

23. ErSi2 silicide is found apparently in the films grown at lower temperatures and/or in lower oxygen ambient pressures.

在较低的温度和较低的氧气压下在薄膜内易生成硅化铒。

24. Keywords multicrystalline silicon;metallurgic method;electrical resistivity;grain boundary;metal silicide;

多晶硅;冶金法;电阻率;晶界;金属硅化物;

25. The results show that these three structures, Ru had the worst thermal stability and Ru silicide Ru2Si3 formed after 600oC annealing;

多种结果表明，在Ru、Ru/Ta和Ru/TaN这三种结构中，Ru结构的热学稳定性比较差，经600oC退火后，Ru和Si发生反应生成了Ru的硅化物；

26. Keywords dehydration of sorbitol;gas chromatography;silicide etherification;

失水山梨醇;硅醚化;气相色谱法;

27. Irradiation behavior of experimental miniature uranium silicide fuel plates

实验性微型硅化铀燃料板的辐照性能

28. In addition, the oxidized Si surface can also suppress the formation of the silicide phase.

实验结果还发现，氧化了的Si衬底可以有效抑制硅化铒的生成。

29. Auger chemical shift (ACS) of several compounds of silicide and metal oxide was studied using scanning Auger microprobe in this paper.

对几种硅化物及金属氧化物的俄歇化学位移作了实验研究。

30. The application of titanium silicide in integrated circuits was emphatically introduced.

对硅化钛在集成电路中的应用进行了重点介绍。

31. When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide.

当我们在矽基板上形成矽化镍时，将会有萧特基接面存在其间。

32. A suitable inoculant,such as calcium silicide or equivalent,is to be added to the metal stream as the furnace is tapped.

当熔炉运行的时候，可以在金属溶液里加一种合适的变质剂，例如钙化剂或者其他的等价物。

33. Technique Research of Microwave Schottky Silicide Barrier Diodes

微波肖特基势垒二极管硅化物工艺技术研究

34. We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process.

我们分别利用快速热退火与雷射引致退火形成矽化镍并讨论非晶矽在退火制程中所扮演的角色。

35. Abstract: To determine the evolution of PH3 gas from the rare earth(RE) silicide alloy, the qualitative and quantitative analyses of PH3 were done by water-reaction experiment.

摘 要: 通过水化实验，对稀土硅化物合金中逸出的PH3气体进行了定性与定量分析。

36. Nickel silicide has been widely used as gate materials of transistor in integrated circuit processes for the reduction of interconnection resistance.

摘要:矽化镍由于可以降低内部连接导线的电阻率，故被广泛地运用在积体电路制程中。

37. Developments in an Advanced Niobium-Niobium Silicide Based in-Situ Composite

新型铌-硅基共晶自生复合材料的研究进展

38. Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work.

最后，我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。

39. This paper ir/troduces the physical property and application characteristic of rare-earth silicide intermediate alloy produced by thermal reduction method.

本文介绍了使用碳热还原一步法生产的稀土硅化物中间合金的物理特性和应用特点。

40. Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.

本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。

41. The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd.

本文讨论了硅化铱肖特基势垒红外探测器(IrSi-SBIRD)的典型结构和其制作技术;

42. The silicide coatings obtained in the fluidized-bed are similar to those prepared by other methods.

流床法获得的硅化物层与其它方法得到的相类似。

43. The average microhardness of the laser clad silicide alloy coating ranges from HV650 to HV750.

涂层组织显微硬度在HV650-750之间,沿层深分布均匀;

44. Keywords laser melt deposition;metal silicide;intermetallics;wear;

激光熔化沉积;金属硅化物;金属间化合物;磨损;

45. Keywords Carbon/carbon composites;oxidation protective coating;slurry;SiC whisker;silicide;glass coating;oxidation behavior;oxidation mechanism;

炭/炭复合材料;防氧化涂层;包埋法;料浆法;碳化硅晶须;硅化物;玻璃涂层;氧化行为;失效机理;

46. Keywords Ti6242S;heat treatment;silicide;crystal structure;orientation relationship;

热处理;硅化物;晶体结构;位向关系;

47. When growing silicide electrode, the thick silicide can punch through the shallow source and form Ohm contact with body below that has high dopant concentration.

然后生长硅化物电极，厚的硅化物穿透源区浅结与下面高浓度的体区形成欧姆接触。

48. In this thesis, we will provide a novel application of nickel silicide on photo detector.

然而在本篇论文中，我们将会提出一个新颖的矽化镍应用在光侦测器上。

49. USING MOSSBAUER EFFECT TO STUDY FORMATION PROCESS OF IRON SILICIDE

用穆斯堡尔效应研究铁硅化合物的形成过程

50. We have a production line of organic chloride, silicide, nitride compounds and etc.

目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。

51. hexaboron silicide

硅化六硼

52. silicide poisoning

硅化合物中毒

53. silicide semiconductor

硅化物半导体

54. silicide technology

硅化物技术

55. silicide coating

硅化物敷层 硅化物涂层

56. Silicide Bridge

硅化物桥

57. silicide resistor

硅化物电阻器

58. silicide refractory

硅化物耐火材料

59. silicide metallization

硅化物金属化

60. silicide ceramics

硅化物陶瓷

61. carbon silicide

硅化碳

62. yttrium silicide

硅化钇

63. ruthenium silicide

硅化钌

64. thorium silicide

硅化钍

65. vanadium silicide

硅化钒

66. calcium silicide

硅化钙

67. titanium silicide

硅化钛

68. Keywords APCVD;Titanium Silicide;films;phase formation;nanowires;growth mechanism;

硅化钛;薄膜;晶相形成;纳米线;生长机理;

69. barium silicide

硅化钡

70. tungsten silicide

硅化钨

71. tungsten silicide thin film

硅化钨薄膜

72. cobalt silicide

硅化钴

73. molybdenum silicide

硅化钼

74. molybdenum silicide ceramics

硅化钼陶瓷

75. uranium silicide

硅化铀

76. niobium silicide

硅化铌

77. thulium silicide

硅化铥

78. chromium silicide

硅化铬

79. terbium silicide

硅化铽

80. lithium silicide

硅化锂